Fz Silicon Wafers
Negotiable | 25 Pieces (MOQ) |
Min. Order:
25 Pieces
Port:
Shenzhen, China
Payment Terms:
T/T, Western Union, Paypal
Guangdong, China
Last Login Date:
Aug 21, 2025
Main Products:
Silicon Wafers, Sic Wafers, Soi Wafers, Silicon Ingots, Solar Cell Wafers, CMP Polishing Pads, Silicon Seed Crystal, Semiconductor Wafers
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Product Description
Company Info
Basic Info.
Model NO.
SWFZ200725
Product Description
Crystal Growth Method: FZ
Diameter: 200±0,2 mm
Conductivity Type/Dopant: Intrisic/Undoped
Crystal Orientation: <100> ±0,5°
Resistivity: ≥10000 Ohm×cm
Radial resistivity gradient: <50%
Thickness: 725±15 µn
Interstital Oxygen Content: < 1 ppma
Interstital Oxygen Gradient: <8%
Carbon Content: <0,3 ppma
Surface metallic contamination: (Fe, Cu, Cr, Ni, Zn, Na, Ca, Al, K) : 2,5×10 10 cm-2 for each element
Front Surface: Polished
Surface roughness (field 2×2 µm): < 0,5 nm
Flat type: Notch
Flat Orientation Notch: <110>±1°
Flat position: SEMI Standard
Light scattering defects > 0,20 µm: <30
Additional layers: No
TTV: < 5 µm
BOW: < 20 µm
WARP: < 25 µm
SFQR (field 25×25 mm): < 0,18 µm
Grade: Prime
Laser mark: None
Back side processing: etched
Edge: SEMI Standard
Diameter: 200±0,2 mm
Conductivity Type/Dopant: Intrisic/Undoped
Crystal Orientation: <100> ±0,5°
Resistivity: ≥10000 Ohm×cm
Radial resistivity gradient: <50%
Thickness: 725±15 µn
Interstital Oxygen Content: < 1 ppma
Interstital Oxygen Gradient: <8%
Carbon Content: <0,3 ppma
Surface metallic contamination: (Fe, Cu, Cr, Ni, Zn, Na, Ca, Al, K) : 2,5×10 10 cm-2 for each element
Front Surface: Polished
Surface roughness (field 2×2 µm): < 0,5 nm
Flat type: Notch
Flat Orientation Notch: <110>±1°
Flat position: SEMI Standard
Light scattering defects > 0,20 µm: <30
Additional layers: No
TTV: < 5 µm
BOW: < 20 µm
WARP: < 25 µm
SFQR (field 25×25 mm): < 0,18 µm
Grade: Prime
Laser mark: None
Back side processing: etched
Edge: SEMI Standard
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